Cov Qauv Indium Doped Tin Oxide ITO Iav 10ohm
Cov Lus Qhia Txog Khoom:
1. Loj: 300x200mm / Thickness: 2±0.2mm Tsis kam/sq: 20ohms
2. Cov Khoom Siv Indium Doped Tin Oxide ITO Iav
3. Kub ua haujlwm: txog li 300 degrees centigrade (Yog tias kub ua haujlwm yuav tsum txog li 600 degree, FTO kuj muaj)
4. Kev kho qhov chaw ntxiv: Txheej tiv thaiv kev cuam tshuam
5. Daim Ntawv Thov: lub hnub ci hlwb, kev sim tshuaj lom neeg, kev sim electrochemical (electrode), lub tsev kawm ntawv qib siab loj, EMI iav thiab lwm qhov chaw siv thev naus laus zis tshiab
1. Qhov chaw ua qauv siab tshaj plaws 350 x 350 hli
2. Yam tsawg kawg nkaus ntawm qhov ntev 0.05 hli
3. Qhov tsawg kawg nkaus nrug 0.05 hli
4. Qhov tseeb ntawm qhov chaw+/- 0.02 hli
1. ITO conductive iav yog tsim los ntawm kev tso silicon dioxide (SiO2) thiab indium tin oxide (feem ntau hu ua ITO) cov yeeb yaj kiab nyias nyias ntawm lub hauv paus ntawm soda-lime lossis borosilicate iav los ntawm kev siv txoj kev ntsuas magnetron.
1. FTO conductive iav yog fluorine-doped SnO2 pob tshab conductive iav (SnO2: F), hu ua FTO.
2. SnO2 yog ib qho semiconductor oxide dav dav uas pom tseeb rau lub teeb pom kev, nrog rau qhov sib txawv ntawm 3.7-4.0 eV, thiab muaj cov qauv tetrahedral kub liab ib txwm muaj. Tom qab doped nrog fluorine, zaj duab xis SnO2 muaj qhov zoo ntawm kev xa lub teeb zoo rau lub teeb pom kev, cov coefficient nqus ultraviolet loj, tsis tshua muaj zog, cov khoom siv tshuaj ruaj khov, thiab muaj zog tiv taus acid thiab alkali ntawm chav tsev kub.
Txhua yam khoom siv yog UA RAWS LI ROHS III (European Version), ROHS II (Suav Teb Version), REACH (Tam Sim No Version)
PEB LUB HOOBKAS
PEB COV KAB NTAU LAWM & LUB TSEV KHOOM
Zaj duab xis tiv thaiv lamianting - Pearl paj rwb ntim khoom - Kraft ntawv ntim khoom
3 HOM KEV XAIV QHAB NPAUM
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