
Indium Doped Tin Oxide ITO Girazi 10ohm ine mapatani
Ruzivo rweChigadzirwa:
1. Saizi: 300x200mm / Ukobvu: 2±0.2mm Kuramba/sq: 20ohms
2. Girazi reITO Rinofambisa Mushonga weIndium Doped Tin Oxide
3. Tembiricha yekushanda: kusvika madhigirii 300 centigrade (Kana tembiricha yebasa ichifanira kusvika madhigirii 600, FTO inowanikwawo)
4. Kurapwa kwepamusoro kunowanikwa: Kuvhara kunodzivirira kufungisisa
5. Mashandisirwo: masero ezuva, kuyedza kwezvipenyu, kuyedza kwemagetsi (electrode), marabhoritari makuru emayunivhesiti, girazi reEMI nedzimwe nzvimbo itsva dzetekinoroji
1. Nzvimbo yepamusoro yekugadzira mapatani 350 x 350 mm
2. Chiyero chidiki chechinhu 0.05 mm
3. Nzvimbo shoma 0.05 mm
4. Kurongeka kwenzvimbo+/- 0.02 mm
1. Girazi rinofambisa mvura reITO rinogadzirwa nekuisa silicon dioxide (SiO2) uye indium tin oxide (inowanzozivikanwa seITO) mafirimu matete zvichibva pagirazi resoda-lime kana borosilicate uchishandisa nzira yekuyera magnetron.
1. Girazi rinofambisa mvura reFTO igirazi rinofambisa mvura reSnO2 rakaiswa fluorine-doped fluorine (SnO2: F), rinonzi FTO.
2. SnO2 imhando ye oxide semiconductor ine band-gap yakakura inoonekera kuchiedza chinoonekwa, ine band gap ye 3.7-4.0eV, uye ine chimiro chegoridhe che tetrahedral tsvuku. Mushure mekuiswa fluorine, firimu reSnO2 rine zvakanakira zvekufambiswa kwechiedza zvakanaka kuchiedza chinoonekwa, ultraviolet absorption coefficient yakakura, low resistivity, stable chemical properties, uye yakasimba kuramba acid ne alkali patembiricha yemumba.


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