Iko ITO nke Indium Doped Tin Oxide 10ohm
Nkọwa Ngwaahịa:
1. Nha: 300x200mm / Ọkpụrụkpụ: 2±0.2mm Nguzogide/sq: 20ohms
2. Iko ITO nke Indium Doped Tin Oxide na-eduzi
3. Okpomọkụ ọrụ: ruo ogo 300 Celsius (Ọ bụrụ na okpomọkụ ọrụ ga-eru ogo 600, FTO dịkwa)
4. Ọgwụgwọ elu dị ọzọ dị: Mkpuchi mgbochi ntụgharị uche
5. Ngwa: mkpụrụ ndụ anyanwụ, nnwale bayọlọji, nnwale elektrọnik (electrode), ụlọ nyocha mahadum dị mkpa, iko EMI na mpaghara teknụzụ ọhụrụ ndị ọzọ.
1. Ebe nhazi kachasị elu: 350 x 350 mm
2. Akụkụ njirimara kacha nta 0.05 mm
3. Oghere kacha nta 0.05 mm
4. Izi ezi nke ọnọdụ+/- 0.02 mm
1. A na-emepụta iko ITO site na itinye silicon dioxide (SiO2) na indium tin oxide (nke a na-akpọkarị ITO) ihe nkiri dị gịrịgịrị dabere na soda-lime ma ọ bụ iko borosilicate site na iji usoro nha magnetron.
1. Iko FTO na-eduzi bụ iko SnO2 na-eduzi nke nwere fluorine (SnO2: F), nke a na-akpọ FTO.
2. SnO2 bụ semiconductor nke nwere oghere band-gap oxide nke na-apụta ìhè nye ìhè a na-ahụ anya, nwere oghere band nke 3.7-4.0eV, ma nwee nhazi uhie ọlaedo tetrahedral nkịtị. Mgbe ejiri fluorine tinye ya, ihe nkiri SnO2 nwere uru nke nnyefe ìhè dị mma na ìhè a na-ahụ anya, nnukwu ihe na-anabata ultraviolet, obere iguzogide, ihe ndị na-eme ka kemịkalụ sie ike, na iguzogide acid na alkali siri ike na okpomọkụ ụlọ.
Ihe niile ejiri mee ihe bụ N'IME ROHS nke Atọ (Ụdị Europe), ROHS nke Abụọ (Ụdị China), REACHỊ (Ụdị Ugbu a)
Ụlọ ọrụ anyị
AHỊA MMỤTA NA ỤLỌ NKWÀ ANYỊ
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Ụdị nhọrọ mkpuchi atọ
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