Pepa reGirazi Rinofambisa Magirazi reLab
Electronic Level/High Precision/Super Flatness
Inowanikwa neMulitiple Process
Ruzivo rweParamende
| Zita rechigadzirwa | Girazi Rinofambisa Magirazi Rakajeka 15ohm ITO/FTO Girazi Rekuyedza Kurabhoritari | ||||||||
| Saizi | Yakagadzirirwa sekukumbira | ||||||||
| Ukobvu | 0.33-2.0mm | ||||||||
| Kukosha Kwekufambisa | 3ohm, 5ohm, 7ohm, 8ohm, 10ohm, 15ohm, 20ohm, 30ohm, 50ohm, 70ohm, 100ohm, 150ohm, 300ohm nezvimwewo. | ||||||||
| Kushivirira kwehukobvu | +/-0.05mm | ||||||||
| Kufara | |||||||||
Girazi reITO rinofambisa
1. Girazi reITO rinogadzirwa nekuisa silicon dioxide (SiO2) uye indium tin oxide (inowanzozivikanwa seITO) mafirimu matete zvichibva pagirazi resoda-lime kana borosilicate uchishandisa nzira yekuyera magnetron. 2. ITO isimbi ine hunhu hwakanaka hwekupenya uye hwekufambisa. Ine hunhu hwebandwidth inorambidzwa, kutumirwa kwechiedza chakawanda uye resistivity yakaderera munzvimbo inoonekwa. Inoshandiswa zvakanyanya mumidziyo yekuratidza, maseru ezuva, uye mahwindo anoshandiswa zvakanyanya. Midziyo yerabhoritari nezvimwe zvishandiso zve optoelectronic.
Girazi Rinofambisa Magirazi reFTO
1. Girazi rinofambisa magetsi reFTO igirazi rinofambisa magetsi reSnO2 rakasanganiswa nefluorine (SnO2: F), rinonzi FTO. 2. SnO2 igirazi rine bhandi-gap oxide semiconductor rakafara rinoonekera kuchiedza chinoonekwa, rine bhandi gap ye3.7-4.0eV, uye rine chimiro chegoridhe dzvuku chetetrahedral. Mushure mekuiswa fluorine, firimu reSnO2 rine zvakanakira zvekufambiswa kwechiedza zvakanaka kuchiedza chinoonekwa, ultraviolet absorption coefficient yakakura, resistivity yakaderera, stable chemical properties, uye kuramba kwakasimba acid nealkali patembiricha yemumba.
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